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IRFL4310PBF

IRFL4310PBF

IRFL4310PBF

Infineon Technologies

IRFL4310PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFL4310PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1999
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 100kHz
Gate Charge (Qg) (Max) @ Vgs 25nC @ 100kHz
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 1.6A
Drain-source On Resistance-Max 0.2Ohm
DS Breakdown Voltage-Min 100V
RoHS StatusRoHS Compliant
In-Stock:4162 items

IRFL4310PBF Product Details

IRFL4310PBF Description


International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to provide exceptionally low on-resistance per silicon area. This feature offers the designer a highly effective and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.

The SOT-223 package is made to be surface-mounted utilizing infrared, vapor phase, or wave soldering processes. In addition to having the same simple automatic pick-and-place functionality as regular SOT or SOIC packages, this package's special design offers increased thermal performance thanks to a larger tab for heatsinking. One Watt of power can be lost in a typical surface mount application.



IRFL4310PBF Features


  • Surface Mount

  • Dynamic dv/dt Rating

  • Fast Switching

  • Ease of Paralleling

  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Lead-Free



IRFL4310PBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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