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IRFB4610

IRFB4610

IRFB4610

Infineon Technologies

IRFB4610 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFB4610 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 190W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 73A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 290A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 370 mJ
RoHS StatusNon-RoHS Compliant
In-Stock:2819 items

IRFB4610 Product Details

IRFB4610 Description


IRFB4610 is an N-channel HEXFET Power MOSFET from the manufacturer of Infineon Technologies with a voltage of 100V. The operating temperature of IRFB4610 is -55°C~175°C TJ and its maximum power dissipation is 190W Tc. IRFB4610 has 3 pins and it is available in Tube packaging way. The FET Type of IRFB4610 is N-Channel and its Transistor Application is switching.



IRFB4610 Features


  • Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free



IRFB4610 Applications


  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


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