STN3PF06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STN3PF06 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
220mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE ENERGY RATED
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-2.5A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STN3P
Pin Count
4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
220m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.5A Tc
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
2.5A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Dual Supply Voltage
60V
Nominal Vgs
4 V
Height
1.8mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4138 items
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Unit Price
Ext. Price
STN3PF06 Product Details
STN3PF06 Description
This STN3PF06 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STN3PF06 Features
Extremely dv/dt capability
Application-oriented characterization
100% avalanche tested
STN3PF06 Applicaitons
DC-DC & DC-AC Converters
DC Motor control (DISK DRIVES, etc.)
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