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TK3R1E04PL,S1X

TK3R1E04PL,S1X

TK3R1E04PL,S1X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

SOT-23

TK3R1E04PL,S1X Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature175°C TJ
PackagingTube
Published 2016
Series U-MOSIX-H
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 87W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 30A, 4.5V
Vgs(th) (Max) @ Id 2.4V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 4670pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 63.4nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:6011 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.74000$1.74
50$1.40500$70.25
100$1.26450$126.45
500$0.98350$491.75

About TK3R1E04PL,S1X

The TK3R1E04PL,S1X from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features X35 PB-F POWER MOSFET TRANSISTOR.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the TK3R1E04PL,S1X, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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