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IRF840PBF

IRF840PBF

IRF840PBF

Infineon Technologies

IRF840PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF840PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-55°C~150°C TJ
PackagingBulk
Series HEXFET®
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating8A
Power Dissipation-Max 125W Tc
Power Dissipation125W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Drain to Source Resistance 850mOhm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3587 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.94000$1.94
50$1.56520$78.26
100$1.37570$137.57
500$1.07792$538.96

IRF840PBF Product Details

IRF840PBF Description


The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET? power MOSFET that offers the best combination of fast switching, rugged device design, and low on-resistance to the designer. At power dissipation levels of up to 50W, the package is universally preferred for all commercial-industrial applications.



IRF840PBF Features


  • Easy to parallel

  • Simple drive requirement

  • Dynamic dV/dt rating

  • Repetitive avalanche rated

  • 175°C Operating temperature



IRF840PBF Applications


  • Power Management


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