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IRF8113TR

IRF8113TR

IRF8113TR

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SOIC

SOT-23

IRF8113TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 2.5W Ta
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6m Ω @ 17.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17.2A Ta
Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 17.2A
RoHS StatusNon-RoHS Compliant
In-Stock:4959 items

About IRF8113TR

The IRF8113TR from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 17.2A 8-SOIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF8113TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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