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IPB65R045C7ATMA1

IPB65R045C7ATMA1

IPB65R045C7ATMA1

Infineon Technologies

IPB65R045C7ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPB65R045C7ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series CoolMOS™ C7
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 227W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation227W
Case Connection DRAIN
Turn On Delay Time20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage650V
Drain-source On Resistance-Max 0.045Ohm
Avalanche Energy Rating (Eas) 249 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:4406 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$17.844852$17.844852
10$16.834766$168.34766
100$15.881855$1588.1855
500$14.982882$7491.441
1000$14.134794$14134.794

IPB65R045C7ATMA1 Product Details

IPB65R045C7ATMA1 Description

IPB65R045C7ATMA1 MOSFET is a high-voltage, fast-switching MOSFET which is low in on-state resistance. IPB65R045C7ATMA1 Infineon Technologies gives designers the highest quality combination of ruggedized design, speedy switching, cost-effectiveness, and low resistance to on-resistance. Due to the low resistance of the IPB65R045C7ATMA1 datasheet, it is suitable for Computing, Server, Telecom, UPS, and Solar.

IPB65R045C7ATMA1 Features

Planar cell structure

Optimized for broadest availability

Product qualification

Silicon optimized for applications switching

Low profile package

IPB65R045C7ATMA1 Applications

Server

Computing

Telecom

Solar

UPS


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