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IPB80N06S207ATMA1

IPB80N06S207ATMA1

IPB80N06S207ATMA1

Infineon Technologies

Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263

SOT-23

IPB80N06S207ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2010
Series OptiMOS™
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3m Ω @ 68A, 10V
Vgs(th) (Max) @ Id 4V @ 180μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time37ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage55V
RoHS StatusROHS3 Compliant
In-Stock:4966 items

Pricing & Ordering

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About IPB80N06S207ATMA1

The IPB80N06S207ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB80N06S207ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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