IRF7478TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7478TRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
HEXFET®
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
26MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
4.2A
Number of Channels
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Power Dissipation
2.5W
Turn On Delay Time
7.7 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
26m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1740pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
31nC @ 4.5V
Rise Time
2.6ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
44 ns
Continuous Drain Current (ID)
4.2A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
60V
Max Junction Temperature (Tj)
150°C
Height
1.75mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1087 items
IRF7478TRPBF Product Details
IRF7478TRPBF Description
The IRF7478TRPBF is a HEXFET? single N-channel Power MOSFET offering a low gate-to-drain charge to reduce switching losses. The Infineon IRF7478TRPBF is suitable for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRF7478TRPBF is in the SOIC-8 package with 2.5W power dissipation.
IRF7478TRPBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design
Fully Characterized Avalanche Voltage and Current
Lead-Free
Drain-to-Source Breakdown Voltage: 60v
IRF7478TRPBF Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
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