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IRF7425TRPBF

IRF7425TRPBF

IRF7425TRPBF

Infineon Technologies

IRF7425TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7425TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 8.2MOhm
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-15A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.2m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7980pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 130nC @ 4.5V
Rise Time20ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) -15A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 60A
Dual Supply Voltage 20V
Recovery Time 180 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.2 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:4556 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.81000$1.81
500$1.7919$895.95
1000$1.7738$1773.8
1500$1.7557$2633.55
2000$1.7376$3475.2
2500$1.7195$4298.75

IRF7425TRPBF Product Details

IRF7425TRPBF Description


IRF7425TRPBF is a member of HEXFET? power MOSFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Based on these techniques, it is able to provide extremely low gate-to-drain charge to reduce switching losses, fast switching speed, and ruggedized device design. As a result, it is extremely efficient and reliable for electronic designers to use in a broad range of applications.



IRF7425TRPBF Features


  • Extremely low gate-to-drain charge

  • Fast switching speed

  • Low switching losses

  • Ultralow on-state resistance

  • Available in the SO-8 package



IRF7425TRPBF Applications


  • Synchronous rectification

  • Uninterruptible power supply


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