FDD5810 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDD5810 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
35A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
72W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
88W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 32A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.4A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Rise Time
75ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
34 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
37A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7.4A
Drain-source On Resistance-Max
0.022Ohm
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
45 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:9940 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.83000
$0.83
500
$0.8217
$410.85
1000
$0.8134
$813.4
1500
$0.8051
$1207.65
2000
$0.7968
$1593.6
2500
$0.7885
$1971.25
FDD5810 Product Details
FDD5810 Description
FDD5810 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 60V. The operating temperature of the FDD5810 is -55??C~175??C TJ and its maximum power dissipation is 72W Tc. FDD5810 has 2 pins and it is available in Tape & Reel (TR) packaging way.
FDD5810 Features
RDS(ON) = 22m"!#Typ.), VGS = 5V, ID = 29A
Qg(5) = 13nC (Typ.), VGS = 5V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse / Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
FDD5810 Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection System
DC-DC converters and Off-line UPS
Distributed Power Architecture and VRMs
Primary Switch for 12V and 24V systems
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers
