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IRF7410PBF

IRF7410PBF

IRF7410PBF

Infineon Technologies

IRF7410PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7410PBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureULTRA LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating ModeENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8676pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 91nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 16A
Drain-source On Resistance-Max 0.007Ohm
Pulsed Drain Current-Max (IDM) 65A
DS Breakdown Voltage-Min 12V
RoHS StatusROHS3 Compliant
In-Stock:1278 items

IRF7410PBF Product Details

Description


The IRF7410PBF is a -12V single P-channel HEXFET? Power MOSFET that uses innovative processing techniques to provide low on-resistance per silicon area. This advantage offers the designer a very efficient device for battery and load management applications. The package has been upgraded with a bespoke lead frame for improved thermal performance and multiple-die capability, making it suitable for a wide range of power applications. Multiple devices can now be used in an application while using up a lot less board space thanks to these enhancements. Vapour phase, infrared, and wave soldering techniques are all supported by the package.



Features


● Ultra low on-resistance

● MOSFET with P-Channel

● Surface mount

● Tape and reel versions are available

● Lead-Free



Applications


● Power Management

● Load Switching

● Industrial

● Automotive

● DC-DC Converters


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