Name: IRF7103TRPBF
Brand: Infineon Technologies
SKU: IRF7103TRPBF
Price: 1.11000 USD
Availability: InStock

new-10%

IRF7103TRPBF

Manufacturer part number:IRF7103TRPBF

Manufacturer:Infineon Technologies

Description:IRF7103TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7103TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Manufacturer Package Identifier	IRF7103TRPBF
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	130mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	50V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	3A
Base Part Number	IRF7103PBF
Number of Elements	2
Row Spacing	6.3 mm
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	5.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	8ns
Fall Time (Typ)	25 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	50V
Dual Supply Voltage	50V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	100 ns
FET Feature	Standard
Nominal Vgs	3 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRF7103TRPBF Product Details

IRF7103TRPBF Description

The IRF7103TRPBF is a dual N-channel MOSFET that may be soldered using vapor phase, infrared, or wave methods. It has been updated with a bespoke lead frame for improved thermal performance and dual-die capabilities, making it suitable for a wide range of power applications. Multiple devices can be employed in an application with significantly less board space thanks to these enhancements.

IRF7103TRPBF Features

Advanced process technology

Ultra-low ON-resistance

Surface-mount device

Dynamic dV/dt rating

Fast switching performance

IRF7103TRPBF Applications

Industrial

Power Management