FDMA2002NZ Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. MicroFET 2x2 provides excellent thermal performance in terms of its physical size, making it ideal for linear mode applications.
FDMA2002NZ Features
2.9 A, 30 V
RDS(ON) = 123 m|? @ VGS = 4.5 V
RDS(ON) = 140 m|? @ VGS = 3.0 V
RDS(ON) = 163 m|? @ VGS = 2.5 V
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
HBM ESD protection level=1.8kV (Note 3)
RoHS Compliant
Free from halogenated compounds and antimonyoxides
FDMA2002NZ Applications
This product is general usage and suitable for many different applications.