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FDMA2002NZ

FDMA2002NZ

FDMA2002NZ

ON Semiconductor

FDMA2002NZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMA2002NZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 123MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation650mW
Current Rating2.9A
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.5W
Case Connection DRAIN
Turn On Delay Time6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 123m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time8ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 2.9A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 30 pF
Height 850μm
Length 2mm
Width 2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7370 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FDMA2002NZ Product Details

FDMA2002NZ Description

The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. MicroFET 2x2 provides excellent thermal performance in terms of its physical size, making it ideal for linear mode applications.


FDMA2002NZ Features

2.9 A, 30 V

RDS(ON) = 123 m|? @ VGS = 4.5 V

RDS(ON) = 140 m|? @ VGS = 3.0 V

RDS(ON) = 163 m|? @ VGS = 2.5 V

Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

HBM ESD protection level=1.8kV (Note 3)

RoHS Compliant

Free from halogenated compounds and antimonyoxides


FDMA2002NZ Applications

This product is general usage and suitable for many different applications.






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