Name: IRF5210STRLPBF
Brand: Infineon Technologies
SKU: IRF5210STRLPBF
Price: 3.35000 USD
Availability: InStock

new-10%

IRF5210STRLPBF

Manufacturer part number:IRF5210STRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 60m Ω @ 38A, 10V ±20V 2780pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:IRF5210STRLPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	HEXFET®
Published	1998
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	60mOhm
Additional Feature	HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	Other Transistors
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-40A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2780pF @ 25V
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Rise Time	63ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	-40A
Threshold Voltage	-4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Dual Supply Voltage	100V
Recovery Time	260 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-4 V
Height	4.83mm
Length	10.668mm
Width	9.65mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

IRF5210STRLPBF Product Details

IRF5210STRLPBF Description

IRF5210STRLPBF power MOSFETs are made with proven silicon methods and can be used in a variety of applications including DC motors, inverters, SMPS, lights, load switches, and battery-powered applications. For ease of design, the IRF5210STRLPBF is offered in a variety of surface mount and through-hole packages with industry-standard footprints.

IRF5210STRLPBF Features

Advanced Process Technology
Ultra-Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from IRF5210S/L
P-Channel
Lead-Free

IRF5210STRLPBF Applications

Switching applications
Industrial: Aerospace & defense/Appliances/Building automation/Electronic point of sale (EPOS)/Factory automation & control/Grid infrastructure/Industrial transport (non-car & non-light truck)/Lighting/Medical/Motor drives/Power delivery/Pro audio, video & signage/Test & measurement
Enterprise systems: Datacenter & enterprise computing/Enterprise machine/Enterprise projectors
Personal electronics: Connected peripherals & printers/Data storage/Gaming/Home theater & entertainment/Mobile phones/PC & notebooks/Portable electronics/Tablets/TV/Wearables (non-medical)