IPA60R060P7XKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 159 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2895pF @ 400V is its maximum input capacitance.Peak drain current is 151A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPA60R060P7XKSA1 Features
the avalanche energy rating (Eas) is 159 mJ
based on its rated peak drain current 151A.
a 600V drain to source voltage (Vdss)
IPA60R060P7XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R060P7XKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
