Name: AUIRFS3107TRL
Brand: Infineon Technologies
SKU: AUIRFS3107TRL
Price: 7.84000 USD
Availability: InStock

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AUIRFS3107TRL

Manufacturer part number:AUIRFS3107TRL

Manufacturer:Infineon Technologies

Description:AUIRFS3107TRL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFS3107TRL Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	370W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	370W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 140A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9370pF @ 50V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	110ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	99 ns
Continuous Drain Current (ID)	195A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	900A
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

AUIRFS3107TRL Product Details

AUIRFS3107TRL Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175??C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.