RFP22N10 Description
The RFP22N10 is an N-Channel enhancement mode silicon gate power field effect transistor intended primarily for use with logic level (5V) driving sources in applications such as programmable controllers, automobile switching, and solenoid drivers. This capability is achieved using a unique gate oxide design that delivers full-rated conduction at gate biases ranging from 3V to 5V, allowing genuine on-off power management straight from logic circuit supply voltages.
RFP22N10 Features
12A, 100V
rDS(ON)= 0.200Ω
Design Optimized for 5V Gate Drive
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
RFP22N10 Application
