Name: AUIRFS4010
Brand: Infineon Technologies
SKU: AUIRFS4010
Availability: InStock

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AUIRFS4010

Manufacturer part number:AUIRFS4010

Manufacturer:Infineon Technologies

Description:AUIRFS4010 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFS4010 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.7m Ω @ 106A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9575pF @ 50V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	215nC @ 10V
Rise Time	86ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	180A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0047Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	720A
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRFS4010 Product Details

AUIRFS4010 Description

The AUIRFS4010 HEXFET? Power MOSFET, specifically created for automotive applications, makes use of cutting-edge manufacturing processes to achieve extraordinarily low on-resistance per silicon area. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a multitude of applications, including automotive ones.