Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRF250P224

IRF250P224

IRF250P224

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 58A, 10V ±20V 9915pF @ 50V 203nC @ 10V 250V TO-247-3

SOT-23

IRF250P224 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series StrongIRFET™
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 313W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 9915pF @ 50V
Current - Continuous Drain (Id) @ 25°C 96A Tc
Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-247AC
Drain Current-Max (Abs) (ID) 96A
Drain-source On Resistance-Max 0.012Ohm
Pulsed Drain Current-Max (IDM) 384A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 496 mJ
RoHS StatusROHS3 Compliant
In-Stock:771 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.97000$9.97
10$8.97200$89.72
400$6.77875$2711.5
800$5.70213$4561.704

IRF250P224 Product Details

IRF250P224 Description


IRF250P224 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 250V. The operating temperature of the IRF250P224 is -55°C~175°C TJ and its maximum power dissipation is 313W Tc. IRF250P224 has 3 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF250P224 is 250V.



IRF250P224 Features


  • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

  • Fully Characterized Capacitance and Avalanche SOA

  • Enhanced body diode dv/dt and di/dt Capability

  • Pb-Free ; RoHS Compliant ; Halogen-Free



IRF250P224 Applications


  • UPS and Inverter applications

  • Half-bridge and full-bridge topologies

  • Resonant mode power supplies

  • DC/DC and AC/DC converters

  • OR-ing and redundant power switches

  • Brushed and BLDC Motor drive applications

  • Battery powered circuits


Get Subscriber

Enter Your Email Address, Get the Latest News