Name: IRFP260NPBF
Brand: Infineon Technologies
SKU: IRFP260NPBF
Price: 4.42000 USD
Availability: InStock

new-10%

IRFP260NPBF

Manufacturer part number:IRFP260NPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Bulk 40m Ω @ 28A, 10V ±20V 4057pF @ 25V 234nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:IRFP260NPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Bulk
Series	HEXFET®
Published	2004
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
Current Rating	50A
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4057pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	234nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	48 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	200A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	560 mJ
Recovery Time	402 ns
Nominal Vgs	4 V
Height	20.2946mm
Length	15.875mm
Width	5.3mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRFP260NPBF Product Details

IRFP260NPBF Description

The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. The IRFP260NPBF features extremely low on-resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements, and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.