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MTB50P03HDLT4G

MTB50P03HDLT4G

MTB50P03HDLT4G

ON Semiconductor

MOSFET PFET D2PAK 30V 50A 25mOhm

SOT-23

MTB50P03HDLT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 25MOhm
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-50A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 125W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation125W
Case Connection DRAIN
Turn On Delay Time22 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V
Rise Time340ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 218 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage -30V
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1329 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$2.14500$1716

About MTB50P03HDLT4G

The MTB50P03HDLT4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET PFET D2PAK 30V 50A 25mOhm.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MTB50P03HDLT4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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