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BS108ZL1G

BS108ZL1G

BS108ZL1G

ON Semiconductor

BS108ZL1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

BS108ZL1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Contact PlatingCopper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8Ohm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating250mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Power Dissipation-Max 350mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation350mW
Turn On Delay Time15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 100mA, 2.8V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Drive Voltage (Max Rds On,Min Rds On) 2V 2.8V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage 200V
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1338 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.264198$1.264198
10$1.192640$11.9264
100$1.125132$112.5132
500$1.061445$530.7225
1000$1.001364$1001.364

BS108ZL1G Product Details

BS108ZL1G Description


BS108ZL1G belongs to the family of small signal MOSFETs provided by ON Semiconductor. Its inherent current sharing capability permits easy paralleling of many devices. It is specifically designed for high-voltage, high-speed switching applications, line drivers, relay drivers, CMOS logic, microprocessor or TTL to the high-voltage interface, and high-voltage display drivers.



BS108ZL1G Features


  • Low drive requirement

  • AEC qualified

  • PPAP capable

  • Available in the TO-92 package



BS108ZL1G Applications


  • TTL

  • Line drivers

  • Relay drivers

  • CMOS logic

  • Microprocessor


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