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IPW60R037P7XKSA1

IPW60R037P7XKSA1

IPW60R037P7XKSA1

Infineon Technologies

IPW60R037P7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPW60R037P7XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2014
Series CoolMOS™ P7
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 255W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation255W
Case Connection DRAIN
Turn On Delay Time22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 29.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1.48mA
Input Capacitance (Ciss) (Max) @ Vds 5243pF @ 400V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 121nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.037Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 295 mJ
Max Junction Temperature (Tj) 150°C
Height 25.4mm
RoHS StatusROHS3 Compliant
In-Stock:620 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.68000$12.68
10$11.49200$114.92
240$9.59488$2302.7712
720$8.17181$5883.7032

IPW60R037P7XKSA1 Product Details

IPW60R037P7XKSA1 Description


The IPW60R037P7XKSA1 is appropriate for managing modest amounts of electricity in portable electronic devices.



IPW60R037P7XKSA1 Features


?An important reduction in switching and conduction losses has been achieved.


?High-performance trench technology is employed for extremely low RDS (ON)



IPW60R037P7XKSA1 Applications


Switching applications


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