SIB441EDK-T1-GE3 Overview
A device's maximal input capacitance is 1180pF @ 6V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -12V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 9A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 60 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 12V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).
SIB441EDK-T1-GE3 Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
a 12V drain to source voltage (Vdss)
SIB441EDK-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIB441EDK-T1-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
