IXTH90P10P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.There is a peak drain current of 225A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH90P10P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of -100V voltage
based on its rated peak drain current 225A.
a 100V drain to source voltage (Vdss)
IXTH90P10P Applications
There are a lot of IXYS
IXTH90P10P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
