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PMZB670UPE,315

PMZB670UPE,315

PMZB670UPE,315

Nexperia USA Inc.

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 850m Ω @ 400mA, 4.5V ±8V 87pF @ 10V 1.14nC @ 4.5V 20V 3-XFDFN

SOT-23

PMZB670UPE,315 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingTin
Mounting Type Surface Mount
Package / Case 3-XFDFN
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count3
Number of Elements 1
Power Dissipation-Max 360mW Ta 2.7W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation715mW
Case Connection DRAIN
Turn On Delay Time18 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 87pF @ 10V
Current - Continuous Drain (Id) @ 25°C 680mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.14nC @ 4.5V
Rise Time30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 72 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 680mA
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage-20V
Drain Current-Max (Abs) (ID) 0.68A
Drain-source On Resistance-Max 0.85Ohm
Drain to Source Breakdown Voltage -20V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:16487 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.111290$0.11129
10$0.104991$1.04991
100$0.099048$9.9048
500$0.093442$46.721
1000$0.088152$88.152

PMZB670UPE,315 Product Details

PMZB670UPE,315 Overview


A device's maximal input capacitance is 87pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 680mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.68A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 80 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.By using -20V, it can supply the maximum voltage from two sources.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

PMZB670UPE,315 Features


a continuous drain current (ID) of 680mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 80 ns
a 20V drain to source voltage (Vdss)


PMZB670UPE,315 Applications


There are a lot of Nexperia USA Inc.
PMZB670UPE,315 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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