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IPS135N03LGAKMA1

  • IPS135N03LGAKMA1 - IPS135N03LGAKMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • IPS135N03LGAKMA1 - IPS135N03LGAKMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

IPS135N03LGAKMA1

IPS135N03LGAKMA1

Infineon Technologies

IPS135N03LGAKMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IPS135N03LGAKMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2010
Series OptiMOS™
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
HTS Code8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W Tc
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.0135Ohm
Pulsed Drain Current-Max (IDM) 210A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 20 mJ
RoHS StatusRoHS Compliant
In-Stock:2911 items

IPS135N03LGAKMA1 Product Details

IPS135N03LGAKMA1 Features

Fast switching MOSFET for SMPS

Optimized technology for DC/DCconverters

Qualified according to JEDEC1)for target applications

N-channel, logic level

Excellent gate chargers(on) product(FOM)

Very low on-resistance(on)

Avalanche rated

Pb-free plating; RoHS-compliant

Halogen-free according to IEC61249-2-21


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