NDT455N Description
This high cell density, DMOS N-Channel logic level enhancement mode power field effect transistor is made exclusively by Fairchild. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These devices are best suited for low voltage tasks that need quick switching, little in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion.
NDT455N Features
11.5 A, 30 V. RDS(ON) = 0.015 W @ VGS = 10 V
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
NDT455N Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
