IRLR024NPBF Description
International Rectifier's Fifth Generation HEXFET? Power MOSFETs use cutting-edge processing methods to deliver the lowest onresistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for.
The D-PAK is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For through-hole mounting uses, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRLR024NPBF Features
IRLR024NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
