Name: IPI147N12N3GAKSA1
Brand: Infineon Technologies
SKU: IPI147N12N3GAKSA1
Price: 0.90000 USD
Availability: InStock

new-10%

IPI147N12N3GAKSA1

Manufacturer part number:IPI147N12N3GAKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:IPI147N12N3GAKSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	107W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	107W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.7m Ω @ 56A, 10V
Vgs(th) (Max) @ Id	4V @ 61μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3220pF @ 60V
Current - Continuous Drain (Id) @ 25°C	56A Ta
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	120V
Pulsed Drain Current-Max (IDM)	224A
Avalanche Energy Rating (Eas)	90 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About IPI147N12N3GAKSA1

The IPI147N12N3GAKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPI147N12N3GAKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.