IRLML6402TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLML6402TRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
Micro3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
65mOhm
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-3.7A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.3W
Turn On Delay Time
350 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
633pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.7A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Rise Time
48ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
381 ns
Turn-Off Delay Time
588 ns
Continuous Drain Current (ID)
-3.7A
Threshold Voltage
-550mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
-20V
Pulsed Drain Current-Max (IDM)
22A
Dual Supply Voltage
-20V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-550 mV
Height
1.12mm
Length
3.0226mm
Width
1.397mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:13446 items
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IRLML6402TRPBF Product Details
IRLML6402TRPBF Description
IRLML6402TRPBF is a kind of P-channel MOSFETs that are designed based on the advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLML6402TRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in battery and load management.
IRLML6402TRPBF Features
Thermal resistance Power dissipation Fast switching speed Ruggedized device design Available in the standard SOT-23 package with the industry's smallest footprint
IRLML6402TRPBF Applications
Portable electronics PCMCIA cards Applications where PCB space is at a premium
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