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FQI3N30TU

FQI3N30TU

FQI3N30TU

ON Semiconductor

Trans MOSFET N-CH 300V 3.2A 3-Pin(3+Tab) I2PAK T/R

SOT-23

FQI3N30TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 55W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:15990 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.313252$3.313252
10$3.125709$31.25709
100$2.948782$294.8782
500$2.781871$1390.9355
1000$2.624407$2624.407

About FQI3N30TU

The FQI3N30TU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 300V 3.2A 3-Pin(3+Tab) I2PAK T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI3N30TU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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