Name: IPD380P06NMATMA1
Brand: Infineon Technologies
SKU: IPD380P06NMATMA1
Price: 2.68000 USD
Availability: InStock

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IPD380P06NMATMA1

Manufacturer part number:IPD380P06NMATMA1

Manufacturer:Infineon Technologies

Description:IPD380P06NMATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPD380P06NMATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	OptiMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	38m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	4V @ 1.7mA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 30V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.038Ohm
Pulsed Drain Current-Max (IDM)	140A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	559 mJ
RoHS Status	ROHS3 Compliant

IPD380P06NMATMA1 Product Details

IPD380P06NMATMA1 Description

IPD380P06NMATMA1 belongs to the family of OptiMOS? P-channel MOSFETs provided by Infineon Technologies for battery management, load switch, and reverse polarity protection applications. It is ideally suitable for high-quality demanding applications due to its easy interface to MCU, fast switching, and avalanche ruggedness. It is able to improve the efficiency at low loads due to low Qg.