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TK62N60W,S1VF

TK62N60W,S1VF

TK62N60W,S1VF

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 40m Ω @ 30.9A, 10V ±30V 6500pF @ 300V 180nC @ 10V TO-247-3

SOT-23

TK62N60W,S1VF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature150°C TJ
PackagingTube
Series DTMOSIV
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 400W Tc
Element ConfigurationSingle
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 30.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 3.1mA
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 300V
Current - Continuous Drain (Id) @ 25°C 61.8A Ta
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 310 ns
Continuous Drain Current (ID) 61.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
FET Feature Super Junction
RoHS StatusRoHS Compliant
In-Stock:606 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.030000$13.03
10$12.292453$122.92453
100$11.596654$1159.6654
500$10.940239$5470.1195
1000$10.320980$10320.98

TK62N60W,S1VF Product Details

TK62N60W,S1VF Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6500pF @ 300V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 61.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 310 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TK62N60W,S1VF Features


a continuous drain current (ID) of 61.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 310 ns


TK62N60W,S1VF Applications


There are a lot of Toshiba Semiconductor and Storage
TK62N60W,S1VF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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