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IXTA30N25L2

IXTA30N25L2

IXTA30N25L2

IXYS

DISC MOSFET N-CH LINEAR L2 TO-26

SOT-23

IXTA30N25L2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 355W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:629 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$9.398697$9.398697
10$8.866696$88.66696
100$8.364807$836.4807
500$7.891327$3945.6635
1000$7.444649$7444.649

About IXTA30N25L2

The IXTA30N25L2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features DISC MOSFET N-CH LINEAR L2 TO-26.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTA30N25L2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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