Name: IPB80N06S4L05ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S4L05ATMA2
Price: 1.40000 USD
Availability: InStock

new-10%

IPB80N06S4L05ATMA2

Manufacturer part number:IPB80N06S4L05ATMA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 80A TO263-3

Case Package:SOT-23

Datasheet:IPB80N06S4L05ATMA2 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101, OptiMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	107W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 60μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	8180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0048Ohm
Drain to Source Breakdown Voltage	60V
Height	4.4mm
Length	10mm
Width	9.25mm
RoHS Status	ROHS3 Compliant

About IPB80N06S4L05ATMA2

The IPB80N06S4L05ATMA2 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 80A TO263-3.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB80N06S4L05ATMA2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.