FDD86102 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDD86102 Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3.1W Ta 62W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.1W
Case Connection
DRAIN
Turn On Delay Time
7.6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1035pF @ 50V
Current - Continuous Drain (Id) @ 25°C
8A Ta 36A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
3ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2.9 ns
Turn-Off Delay Time
13.4 ns
Continuous Drain Current (ID)
36A
Threshold Voltage
3.1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
8A
Drain-source On Resistance-Max
0.024Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
40A
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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FDD86102 Product Details
FDD86102 Description
FDD86102 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance and ruggedness.
FDD86102 Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A
Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Very low Qg and Qgd compared to competing trench technologies
Fast switching speed
100% UIL tested
RoHS Compliant
FDD86102 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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