NDS352P Description
These P-Channel logic level enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to Fairchild. This extremely dense technique is specifically designed to reduce on-state resistance. These components are best suited for low voltage applications where quick high-side switching, low in-line power loss, and a very compact shape surface mount package are required, such as notebook computer power management, portable electronics, and other battery driven circuits.
NDS352P Features
-0.85A, -20V. RDS(ON) = 0.5W @ VGS = -4.5V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface mount package.
NDS352P Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
