IPB027N10N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPB027N10N3GATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Case Connection
DRAIN
Turn On Delay Time
34 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 275μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
14800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
206nC @ 10V
Rise Time
58ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
28 ns
Turn-Off Delay Time
84 ns
Continuous Drain Current (ID)
120A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
100V
Drain-source On Resistance-Max
0.0027Ohm
Pulsed Drain Current-Max (IDM)
480A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:1114 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IPB027N10N3GATMA1 Product Details
IPB027N10N3GATMA1 Description
IPB027N10N3GATMA1 is a single N-Channelpower MOSFET. IPB027N10N3GATMA1 has a maximum power dissipation of 300000 mW. During shipment, the IPB027N10N3GATMA1component will be enclosed in tape and reel packing to ensure safe delivery and allow for quick mounting after delivery. The operating temperature of this IPB027N10N3GATMA1 MOSFET transistor ranges from -55 to 175 degrees Celsius. The N channel MOSFET transistor IPB027N10N3GATMA1 operates in enhancement mode. The IPB027N10N3GATMA1 is constructed using optimos technology.
IPB027N10N3GATMA1 Features
Environmentally friendly Smallest board-space consumption Easy-to-design products Excellent switching performance World’s lowest R DS(on) Very low Q g and Q gd Increased efficiency Highest power density Less paralleling required Excellent gate charge x R DS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits
IPB027N10N3GATMA1 Applications
Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48V systems Class D audio amplifiers Synchronous rectification for AC-DC SMPS Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks) Uninterruptable power supplies (UPS)
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