FDN306P Description
Fairchild's innovative low voltage PowerTrench technology is used in this FDN306P P-Channel 1.8V specified MOSFET. It's been designed with battery power management in mind.
FDN306P Features
?Quick switching time
?Extremely low RDs with high-performance trench technology (ON)
?In the same footprint, supersOTTM -3 has a lower RDs(ON) and a 30% higher power handling capability than sOT23.
FDN306P Applications
Battery administration
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Battery security
