Name: AUIRF1404
Brand: Infineon Technologies
SKU: AUIRF1404
Price: 6.18000 USD
Availability: InStock

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AUIRF1404

Manufacturer part number:AUIRF1404

Manufacturer:Infineon Technologies

Description:AUIRF1404 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF1404 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	333W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	333W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 121A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5669pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	196nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	160A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.004Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	808A
Avalanche Energy Rating (Eas)	620 mJ
Nominal Vgs	2 V
Height	16.51mm
Length	10.66mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRF1404 Product Details

AUIRF1404 Description

This Stripe Planar design of HEXFET? Power MOSFETs is specifically designed for Automotive applications and uses the latest processing techniques to provide low on-resistance per silicon area. This benefit, when combined with the high switching speed and ruggedized device architecture of HEXFET? power MOSFETs, offers the designer an extremely efficient and dependable device for use in Automotive and a wide range of other applications.