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C3M0016120K

C3M0016120K

C3M0016120K

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 22.3mOhm @ 75A, 15V +15V, -4V 6085pF @ 1000V 211nC @ 15V 1.2kV TO-247-4

SOT-23

C3M0016120K Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Operating Temperature-40°C~175°C TJ
PackagingTube
Series C3M™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 556W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22.3mOhm @ 75A, 15V
Vgs(th) (Max) @ Id 3.6V @ 23mA
Input Capacitance (Ciss) (Max) @ Vds 6085pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 115A Tc
Gate Charge (Qg) (Max) @ Vgs 211nC @ 15V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +15V, -4V
RoHS StatusRoHS Compliant
In-Stock:132 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$82.06000$82.06
500$81.2394$40619.7
1000$80.4188$80418.8
1500$79.5982$119397.3
2000$78.7776$157555.2
2500$77.957$194892.5

C3M0016120K Product Details

C3M0016120K Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 6085pF @ 1000V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1.2kV.Using drive voltage (15V) reduces this device's overall power consumption.

C3M0016120K Features


a 1.2kV drain to source voltage (Vdss)


C3M0016120K Applications


There are a lot of Cree/Wolfspeed
C3M0016120K applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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