HGTD3N60C3S9A Description
High voltage switching devices with MOS gates, the HGTD3N60C3S and HGTP3N60C3, combine the finest qualities of MOSFETs and bipolar transistors. These devices combine the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25°C and 150°C, the significantly smaller on-state voltage loss scarcely varies slightly. The IGBT is perfect for a variety of high voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as power supplies, drivers for solenoids, relays, and contactors, as well as AC and DC motor controllers.
HGTD3N60C3S9A Features
HGTD3N60C3S9A Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
