Description
The IKP40N65H5XKSA1 is a High speed 5 IGBT in TRENCHSTOPTM 5 technology co-packed with RAPID 1 fast and soft antiparallel diode. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
? Low gate charge QG
? IGBT co-packed with RAPID 1 fast and soft antiparallel diode
? Maximum junction temperature 175°C
? Qualified according to JEDEC for target applications
? Pb-free lead plating; RoHS-compliant
? High-speed H5 technology offering
? Best-in-Class efficiency in hard switching and resonant topologies
? Plug and play replacement of previous generation IGBTs
? 650V breakdown voltage
Applications
? Solar converters
? Uninterruptible power supplies
? Circuit
? Welding converters
? Mid to high range switching frequency con
