IKB40N65EH5ATMA1 Description
The IKB40N65EH5ATMA1 is a Hard-switching 650 V, 40 A TRENCHSTOP? 5 high-speed IGBT discrete in D2Pak (TO263) package co-packed with fully rated current Rapid 1 anti-parallel diode, redefining “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications.
IKB40N65EH5ATMA1 Features
650 V breakthrough voltage Compared to Infineon’s HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200 mV reduction in VCEsat
Co-packed with Infineon’s new Rapid Si-diode technology
Low COES /EOSS
Mild positive temperature coefficient VCEsat
Temperature stability of Vf
IKB40N65EH5ATMA1 Applications
Industrial heating and welding
Power Management (SMPS) - Reference Design
Solutions for photovoltaic energy systems
