IGP40N65H5XKSA1 Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.
IGP40N65H5XKSA1 Features
High speed H5 technology offering
*Best-in-Class efficiency in hard switching and resonant topologies
·Plug and play replacement of previous generation 1GBTs650V breakdown voltage·Low gate charge QG
·Maximum junction temperature175°C
Qualified according to JEDEC for target applications+Pb-free lead plating;RoHS compliant
Complete product spectrum and PSpice Models
IGP40N65H5XKSA1 Applications
·Solar converters
Uninterruptible power supplies
Welding converters
·Mid to high range switching frequency converters
