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FZ3600R17KE3B2NOSA1

FZ3600R17KE3B2NOSA1

FZ3600R17KE3B2NOSA1

Infineon Technologies

FZ3600R17KE3B2NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ3600R17KE3B2NOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Screw
Package / Case Module
Number of Pins 9
Published 2002
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Halogen Free Not Halogen Free
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 4.8kA
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:50 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FZ3600R17KE3B2NOSA1 Product Details

FZ3600R17KE3B2NOSA1 Description


FZ3600R17KE3B2NOSA1 IGBT module is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.



FZ3600R17KE3B2NOSA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



FZ3600R17KE3B2NOSA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles

New energy equipment


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