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IFS75B12N3E4B31BOSA1

IFS75B12N3E4B31BOSA1

IFS75B12N3E4B31BOSA1

Infineon Technologies

IFS75B12N3E4B31BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IFS75B12N3E4B31BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 36 Weeks
Mount Base
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 34
ECCN Code EAR99
Additional FeatureUL RECOGNIZED
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X34
Number of Elements 6
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 385W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 150A
Turn On Time185 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 570 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:78 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$120.33500$1203.35

IFS75B12N3E4B31BOSA1 Product Details

IFS75B12N3E4B31BOSA1 Description


IGBT Power Module



IFS75B12N3E4B31BOSA1 Features


? power supply



? Full 3-phase bridge



? Including quick-reverse diodes



? insulated metal base plate for the package



IFS75B12N3E4B31BOSA1 Applications


Switching applications


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