FP10R12W1T4B29BOMA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
FP10R12W1T4B29BOMA1 Applications
·High power converters
·Motor drives
FP10R12W1T4B29BOMA1 Features
·Extended operating temperature Tvjop
·Low switching losses
Mechanical Features
·Package with CTI>400·High power density
·IHM B housing
·RoHS compliant
·Pre-applied Thermal Interface Material
